RN2904FE,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
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Технічний опис RN2904FE,LF Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Current - Collector (Ic) (Max): 100mA, Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Supplier Device Package: ES6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V.
Інші пропозиції RN2904FE,LF за ціною від 2.81 грн до 18.47 грн
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RN2904FE,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 Supplier Device Package: ES6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| RN2904FE,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.1W ES6
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.47 грн |
| 25+ | 12.23 грн |
| 100+ | 5.96 грн |
| 500+ | 4.67 грн |
| 1000+ | 3.24 грн |
| 2000+ | 2.81 грн |