RN2909,LF(CT Toshiba
Виробник: Toshiba
Digital Transistors PNP x 2 BRT, Q1BSR=47kOhm, Q1BER=22kOhm, Q2BSR=47kOhm, Q2BER=22kOhm, VCEO=-50V, IC=-0.1A
| Кількість | Ціна |
|---|---|
| 21+ | 16.11 грн |
| 34+ | 9.62 грн |
| 100+ | 5.16 грн |
| 500+ | 3.77 грн |
| 1000+ | 3.35 грн |
| 3000+ | 2.93 грн |
| 6000+ | 2.51 грн |
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Технічний опис RN2909,LF(CT Toshiba
Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: US6.
Інші пропозиції RN2909,LF(CT за ціною від 3.63 грн до 16.47 грн
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RN2909,LF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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RN2909,LF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: PNPX2 BRT Q1BSR47KOHM Q1BER22KOH Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
товару немає в наявності |