RN2910,LXHF(CT Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: US6
| Кількість | Ціна |
|---|---|
| 3000+ | 5.54 грн |
| 6000+ | 5.10 грн |
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Технічний опис RN2910,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: US6.
Інші пропозиції RN2910,LXHF(CT за ціною від 3.94 грн до 32.08 грн
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RN2910,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: US6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2910,LXHF(CT | Toshiba |
Digital Transistors AUTO AEC-Q TR PNPx2 BRT, 4.7kOhm 4.7kOhm -50V -0.1A (SOT-363) |
на замовлення 2996 шт: термін постачання 21-30 дні (днів) |
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| RN2910,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: US6
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| RN2910,LXHF(CT |
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Виробник: Toshiba
Digital Transistors AUTO AEC-Q TR PNPx2 BRT, 4.7kOhm 4.7kOhm -50V -0.1A (SOT-363)
Digital Transistors AUTO AEC-Q TR PNPx2 BRT, 4.7kOhm 4.7kOhm -50V -0.1A (SOT-363)
на замовлення 2996 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.08 грн |
| 15+ | 22.16 грн |
| 100+ | 7.95 грн |
| 1000+ | 5.98 грн |
| 3000+ | 4.71 грн |
| 9000+ | 4.08 грн |
| 24000+ | 3.94 грн |