RN2911FE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
Part Status: Active
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.11 грн |
| 19+ | 15.44 грн |
| 100+ | 7.77 грн |
| 500+ | 5.95 грн |
| 1000+ | 4.41 грн |
| 2000+ | 3.71 грн |
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Технічний опис RN2911FE(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: ES6, Part Status: Active.
Інші пропозиції RN2911FE(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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RN2911FE(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Supplier Device Package: ES6 Part Status: Active |
товар відсутній |
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RN2911FE(TE85L,F) | Виробник : Toshiba |
Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz |
товар відсутній |