RN2911FE(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.63 грн |
| 19+ | 16.46 грн |
| 100+ | 8.28 грн |
| 500+ | 6.34 грн |
| 1000+ | 4.70 грн |
| 2000+ | 3.96 грн |
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Технічний опис RN2911FE(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6, Part Status: Active, Supplier Device Package: ES6, Resistor - Base (R1): 10kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Power - Max: 100mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount.
Інші пропозиції RN2911FE(TE85L,F)
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
RN2911FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 Part Status: Active Supplier Device Package: ES6 Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
 |
RN2911FE(TE85L,F) | Toshiba |
Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| RN2911FE(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Description: TRANS 2PNP PREBIAS 0.1W ES6
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RN2911FE(TE85L,F) |
|
Виробник: Toshiba
Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz
Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRANSISTOR Pd=100mW F=1MHz
товару немає в наявності
В кошику
од. на суму грн.