| Кількість | Ціна |
|---|---|
| 12+ | 29.62 грн |
| 19+ | 17.95 грн |
| 100+ | 9.78 грн |
| 500+ | 7.24 грн |
| 1000+ | 6.40 грн |
| 3000+ | 5.34 грн |
| 6000+ | 4.01 грн |
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Технічний опис RN4602TE85LF Toshiba
Description: TRANS NPN/PNP PREBIAS 0.3W SM6, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SM6, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO).
Інші пропозиції RN4602TE85LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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RN4602TE85LF | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS NPN/PNP PREBIAS 0.3W SM6Part Status: Active Supplier Device Package: SM6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
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RN4602TE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SM6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) |
товару немає в наявності |