RN4911,LXHF(CT Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.39 грн |
| 6000+ | 4.96 грн |
Відгуки про товар
Написати відгук
Технічний опис RN4911,LXHF(CT Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V, Frequency - Transition: 200MHz, 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: US6.
Інші пропозиції RN4911,LXHF(CT за ціною від 5.79 грн до 30.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RN4911,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR= Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: US6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
RN4911,LXHF(CT | Toshiba |
Digital Transistors AUTO AEC-Q TR PNP+NPN BRT 4.7kOhm 4.7kOhm -50V -0.1A (SOT-363) |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| RN4911,LXHF(CT |
|
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Description: AUTO AEC-Q TR PNP+NPN BRT Q1BSR=
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 15+ | 20.16 грн |
| 100+ | 10.20 грн |
| 500+ | 7.80 грн |
| 1000+ | 5.79 грн |
| RN4911,LXHF(CT |
|
Виробник: Toshiba
Digital Transistors AUTO AEC-Q TR PNP+NPN BRT 4.7kOhm 4.7kOhm -50V -0.1A (SOT-363)
Digital Transistors AUTO AEC-Q TR PNP+NPN BRT 4.7kOhm 4.7kOhm -50V -0.1A (SOT-363)
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)