RN4983FE,LXHF(CT Toshiba
Виробник: Toshiba
Digital Transistors AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN + PNP Q1BSR=22kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-563)
| Кількість | Ціна |
|---|---|
| 12+ | 27.78 грн |
| 19+ | 16.96 грн |
| 100+ | 9.28 грн |
| 500+ | 6.99 грн |
| 1000+ | 6.09 грн |
| 2000+ | 5.40 грн |
| 4000+ | 4.64 грн |
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Технічний опис RN4983FE,LXHF(CT Toshiba
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: ES6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RN4983FE,LXHF(CT за ціною від 5.87 грн до 28.04 грн
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RN4983FE,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3985 шт: термін постачання 21-31 дні (днів) |
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RN4983FE,LXHF(CT | Виробник : Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |