RSR015P03TL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис RSR015P03TL Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Not For New Designs, Supplier Device Package: TSMT3, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Інші пропозиції RSR015P03TL за ціною від 15.14 грн до 59.80 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RSR015P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 1.5A TSMT3Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Not For New Designs Supplier Device Package: TSMT3 Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: SC-96 |
на замовлення 5658 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| RSR015P03 TL | ROHM | SOT23 |
на замовлення 1500 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| RSR015P03TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
Description: MOSFET P-CH 30V 1.5A TSMT3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: SC-96
на замовлення 5658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.80 грн |
| 10+ | 35.90 грн |
| 100+ | 23.30 грн |
| 500+ | 16.78 грн |
| 1000+ | 15.14 грн |
| RSR015P03 TL |
Виробник: ROHM
SOT23
SOT23
на замовлення 1500 шт:
термін постачання 14-28 дні (днів)


