RUM003N02T2L Rohm Semiconductor

Description: MOSFET N-CH 20V 300MA VMT3, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Not For New Designs, Supplier Device Package: VMT3, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).