Технічний опис SI1002R-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 30V 610MA SC75A, Packaging: Tape & Reel (TR), Package / Case: SC-75A, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 610mA (Ta), Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 4.5V, Power Dissipation (Max): 220mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-75A, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 15 V.
Інші пропозиції SI1002R-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SI1002R-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 0.61A 3-Pin SC-75A |
товару немає в наявності |
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| SI1002R-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 610MA SC75A Packaging: Tape & Reel (TR) Package / Case: SC-75A Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 4.5V Power Dissipation (Max): 220mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-75A Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 15 V |
товару немає в наявності |