Технічний опис SI1012R-T1-E3 VISHAY
Description: MOSFET N-CH 20V 500MA SC75A, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SC-75A, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V.
Інші пропозиції SI1012R-T1-E3
| Фото | Назва | Виробник | Інформація |
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| SI1012R-T1-E3 | Виробник : VISHAY |
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на замовлення 9200 шт: термін постачання 14-28 дні (днів) |
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SI1012R-T1-E3 | Виробник : Vishay |
Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75A T/R |
товар відсутній |
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SI1012R-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 500MA SC75A Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SC-75A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
товар відсутній |
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SI1012R-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 500MA SC75A Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SC-75A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
товар відсутній |