SI1036X-T1-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SI1036X-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 610 mA, 610 mA, 0.45 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 610mA
Dauer-Drainstrom Id, p-Kanal: 610mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 610mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.45ohm
Verlustleistung, p-Kanal: 220mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SC-89
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.45ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 220mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
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Технічний опис SI1036X-T1-GE3 VISHAY
Description: VISHAY - SI1036X-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 610 mA, 610 mA, 0.45 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 610mA, Dauer-Drainstrom Id, p-Kanal: 610mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 610mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.45ohm, Verlustleistung, p-Kanal: 220mW, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SC-89, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.45ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 220mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції SI1036X-T1-GE3 за ціною від 7.38 грн до 46.03 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI1036X-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.61A; Idm: 2A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.61A Pulsed drain current: 2A Power dissipation: 0.22W Case: SC89; SOT563 Gate-source voltage: ±8V On-state resistance: 1.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2nC Technology: TrenchFET® |
на замовлення 1967 шт: термін постачання 14-30 дні (днів) |
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SI1036X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 0.61A SC89-6 Part Status: Active Supplier Device Package: SC-89-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 220mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 3412 шт: термін постачання 21-31 дні (днів) |
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SI1036X-T1-GE3 | Vishay / Siliconix |
MOSFETs 30V Vds 8V Vgs SC89-6 |
на замовлення 49099 шт: термін постачання 21-30 дні (днів) |
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SI1036X-T1-GE3 | VISHAY |
Description: VISHAY - SI1036X-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 610 mA, 610 mA, 0.45 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 610mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 610mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.45ohm Verlustleistung, p-Kanal: 220mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SC-89 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.45ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 220mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 915 шт: термін постачання 21-31 дні (днів) |
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SI1036X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 0.61A SC89-6 Part Status: Active Supplier Device Package: SC-89-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 220mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
на замовлення 1950 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1950 шт В кошику од. на суму грн. |
| SI1036X-T1-GE3 |
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Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.61A; Idm: 2A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.61A
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2nC
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 0.61A; Idm: 2A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.61A
Pulsed drain current: 2A
Power dissipation: 0.22W
Case: SC89; SOT563
Gate-source voltage: ±8V
On-state resistance: 1.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2nC
Technology: TrenchFET®
на замовлення 1967 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 36.47 грн |
| 18+ | 23.70 грн |
| 100+ | 13.71 грн |
| 500+ | 9.73 грн |
| 1000+ | 8.55 грн |
| SI1036X-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.61A SC89-6
Part Status: Active
Supplier Device Package: SC-89-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.61A SC89-6
Part Status: Active
Supplier Device Package: SC-89-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 3412 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 14+ | 22.09 грн |
| 100+ | 14.06 грн |
| 500+ | 9.93 грн |
| 1000+ | 8.88 грн |
| SI1036X-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs 30V Vds 8V Vgs SC89-6
MOSFETs 30V Vds 8V Vgs SC89-6
на замовлення 49099 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 40.94 грн |
| 13+ | 24.99 грн |
| 100+ | 13.85 грн |
| 500+ | 10.48 грн |
| 1000+ | 9.28 грн |
| 3000+ | 7.88 грн |
| 9000+ | 7.38 грн |
| SI1036X-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SI1036X-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 610 mA, 610 mA, 0.45 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 610mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 610mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.45ohm
Verlustleistung, p-Kanal: 220mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SC-89
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.45ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 220mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: VISHAY - SI1036X-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 610 mA, 610 mA, 0.45 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 610mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 610mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.45ohm
Verlustleistung, p-Kanal: 220mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SC-89
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.45ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 220mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 915 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 46.03 грн |
| 30+ | 28.06 грн |
| 100+ | 17.89 грн |
| 500+ | 12.49 грн |
| SI1036X-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 0.61A SC89-6
Part Status: Active
Supplier Device Package: SC-89-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 0.61A SC89-6
Part Status: Active
Supplier Device Package: SC-89-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)