SI1302DL-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
| Кількість | Ціна |
|---|---|
| 3000+ | 10.76 грн |
| 6000+ | 9.69 грн |
| 15000+ | 9.02 грн |
Відгуки про товар
Написати відгук
Технічний опис SI1302DL-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V.
Інші пропозиції SI1302DL-T1-GE3 за ціною від 7.47 грн до 35.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI1302DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 600MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V |
на замовлення 29771 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SI1302DL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W Polarisation: unipolar Case: SC70; SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 1.4nC Power dissipation: 0.18W Drain current: 0.48A On-state resistance: 0.48Ω Pulsed drain current: 1.5A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of package: reel; tape |
на замовлення 2969 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
 |
SI1302DL-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SC70-3 |
на замовлення 6282 шт: термін постачання 21-30 дні (днів) |
|
| SI1302DL-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
на замовлення 29771 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 13+ | 25.11 грн |
| 100+ | 18.72 грн |
| 500+ | 13.80 грн |
| 1000+ | 10.67 грн |
| SI1302DL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Polarisation: unipolar
Case: SC70; SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 1.4nC
Power dissipation: 0.18W
Drain current: 0.48A
On-state resistance: 0.48Ω
Pulsed drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Polarisation: unipolar
Case: SC70; SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 1.4nC
Power dissipation: 0.18W
Drain current: 0.48A
On-state resistance: 0.48Ω
Pulsed drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: reel; tape
на замовлення 2969 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 34.40 грн |
| 16+ | 27.74 грн |
| 17+ | 25.22 грн |
| 100+ | 16.64 грн |
| 500+ | 11.85 грн |
| 1000+ | 11.01 грн |
| SI1302DL-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SC70-3
MOSFETs 30V Vds 20V Vgs SC70-3
на замовлення 6282 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 35.76 грн |
| 14+ | 24.57 грн |
| 100+ | 14.52 грн |
| 500+ | 12.50 грн |
| 1000+ | 10.96 грн |
| 3000+ | 8.10 грн |
| 6000+ | 7.47 грн |