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Технічний опис SI1315DL-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 8V 900MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Tc), Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V, Power Dissipation (Max): 300mW (Ta), 400mW (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SC-70-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V.
Інші пропозиції SI1315DL-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SI1315DL-T1-GE3 | Vishay Siliconix |
 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
SI1315DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 900MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V Power Dissipation (Max): 300mW (Ta), 400mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-70-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SI1315DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 900MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V Power Dissipation (Max): 300mW (Ta), 400mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-70-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SI1315DL-T1-GE3 |
|
Виробник: Vishay Siliconix
Транзистори
Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| SI1315DL-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
товару немає в наявності
В кошику
од. на суму грн.
| SI1315DL-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
товару немає в наявності
В кошику
од. на суму грн.