Технічний опис SI1410EDH-T1-E3 VISHAY
Description: MOSFET N-CH 20V 2.9A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V.
Інші пропозиції SI1410EDH-T1-E3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
SI1410EDH-T1-E3 | Виробник : VISHAY | 09+ |
на замовлення 268 шт: термін постачання 14-28 дні (днів) |
||
![]() |
SI1410EDH-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 2.9A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V |
товару немає в наявності |
|
![]() |
SI1410EDH-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 2.9A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V |
товару немає в наявності |