SI1480DH-T1-GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 15+ | 22.61 грн |
| 19+ | 17.83 грн |
| 100+ | 12.26 грн |
| 500+ | 11.07 грн |
| 1000+ | 10.08 грн |
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Технічний опис SI1480DH-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 2.6A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V.
Інші пропозиції SI1480DH-T1-GE3 за ціною від 14.66 грн до 46.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI1480DH-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 2.6A SC70-6Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) |
на замовлення 655 шт: термін постачання 21-31 дні (днів) |
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| SI1480DH-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 2.6A SC70-6
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Description: MOSFET N-CH 100V 2.6A SC70-6
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
на замовлення 655 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.78 грн |
| 10+ | 31.76 грн |
| 100+ | 20.49 грн |
| 500+ | 14.66 грн |