SI1499DH-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 8V 1.6A SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 8 V, Vgs (Max): ±5V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 800mV @ 250µA, Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).