| Кількість | Ціна |
|---|---|
| 8+ | 42.77 грн |
| 13+ | 26.18 грн |
| 100+ | 14.59 грн |
| 500+ | 11.03 грн |
| 1000+ | 9.85 грн |
| 3000+ | 7.89 грн |
| 6000+ | 7.40 грн |
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Технічний опис SI1553CDL-T1-BE3 Vishay / Siliconix
Description: VISHAY - SI1553CDL-T1-BE3 - MOSFET, N & P-CH, 20V, 0.7A, SC-70, tariffCode: 0, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 700mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 700mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.325ohm, Verlustleistung, p-Kanal: 340mW, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.325ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: N and P Channel, Verlustleistung, n-Kanal: 340mW, Betriebstemperatur, max.: 150°C, directShipCharge: 25, SVHC: No SVHC (07-Nov-2024).
Інші пропозиції SI1553CDL-T1-BE3 за ціною від 10.39 грн до 43.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI1553CDL-T1-BE3 | Vishay Siliconix |
 Description: MOSFET N/P-CH 20V 0.7A SC70-6Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 290mW (Ta), 340mW (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2370 шт: термін постачання 21-31 дні (днів) |
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SI1553CDL-T1-BE3 | VISHAY |
Description: VISHAY - SI1553CDL-T1-BE3 - MOSFET, N & P-CH, 20V, 0.7A, SC-70 tariffCode: 0 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 700mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 700mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.325ohm Verlustleistung, p-Kanal: 340mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.325ohm productTraceability: Yes-Date/Lot Code Kanaltyp: N and P Channel Verlustleistung, n-Kanal: 340mW Betriebstemperatur, max.: 150°C directShipCharge: 25 SVHC: No SVHC (07-Nov-2024) |
на замовлення 2998 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2998 шт В кошику од. на суму грн. |
| SI1553CDL-T1-BE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 290mW (Ta), 340mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 290mW (Ta), 340mW (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2370 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.99 грн |
| 12+ | 26.48 грн |
| 100+ | 15.80 грн |
| 500+ | 11.99 грн |
| 1000+ | 10.39 грн |
| SI1553CDL-T1-BE3 |
|
Виробник: VISHAY
Description: VISHAY - SI1553CDL-T1-BE3 - MOSFET, N & P-CH, 20V, 0.7A, SC-70
tariffCode: 0
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 700mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 700mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.325ohm
Verlustleistung, p-Kanal: 340mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.325ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: N and P Channel
Verlustleistung, n-Kanal: 340mW
Betriebstemperatur, max.: 150°C
directShipCharge: 25
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SI1553CDL-T1-BE3 - MOSFET, N & P-CH, 20V, 0.7A, SC-70
tariffCode: 0
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 700mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 700mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.325ohm
Verlustleistung, p-Kanal: 340mW
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.325ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: N and P Channel
Verlustleistung, n-Kanal: 340mW
Betriebstemperatur, max.: 150°C
directShipCharge: 25
SVHC: No SVHC (07-Nov-2024)
на замовлення 2998 шт:
термін постачання 21-31 дні (днів)