Технічний опис SI1555DL-T1-E3 VISHAY
Description: MOSFET N/P-CH 20V/8V 0.66A SC70, Part Status: Obsolete, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA, Drain to Source Voltage (Vdss): 20V, 8V, Power - Max: 270mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції SI1555DL-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI1555DL-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V/8V 0.66A SC70 Part Status: Obsolete Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA Drain to Source Voltage (Vdss): 20V, 8V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
SI1555DL-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V/8V 0.66A SC70 Part Status: Obsolete Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA Drain to Source Voltage (Vdss): 20V, 8V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SI1555DL-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V/8V 0.66A SC70
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V/8V 0.66A SC70
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI1555DL-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V/8V 0.66A SC70
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V/8V 0.66A SC70
Part Status: Obsolete
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.