SI1902CDL-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.11 грн |
| 6000+ | 8.88 грн |
| 9000+ | 8.45 грн |
| 15000+ | 7.48 грн |
| 21000+ | 7.21 грн |
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Технічний опис SI1902CDL-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 420mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.1A, Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V, Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6.
Інші пропозиції SI1902CDL-T1-GE3 за ціною від 6.56 грн до 44.27 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SI1902CDL-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SC70-6; SOT363 Mounting: SMD Kind of package: reel; tape Drain current: 0.9A On-state resistance: 0.235Ω Gate charge: 2nC Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 340 шт: термін постачання 14-30 дні (днів) |
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SI1902CDL-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V Vds 12V Vgs SC70-6 |
на замовлення 30340 шт: термін постачання 21-30 дні (днів) |
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SI1902CDL-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.1A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 420mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 |
на замовлення 21508 шт: термін постачання 21-31 дні (днів) |
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| SI1902CDL-T1-GE3 |
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Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.9A
On-state resistance: 0.235Ω
Gate charge: 2nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: 0.9A
On-state resistance: 0.235Ω
Gate charge: 2nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 340 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.53 грн |
| 19+ | 22.77 грн |
| 21+ | 20.52 грн |
| 100+ | 14.46 грн |
| SI1902CDL-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 20V Vds 12V Vgs SC70-6
MOSFETs 20V Vds 12V Vgs SC70-6
на замовлення 30340 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 31.17 грн |
| 18+ | 18.42 грн |
| 100+ | 10.56 грн |
| 500+ | 9.73 грн |
| 3000+ | 7.52 грн |
| 6000+ | 6.83 грн |
| 9000+ | 6.56 грн |
| SI1902CDL-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2N-CH 20V 1.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
на замовлення 21508 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.27 грн |
| 12+ | 26.32 грн |
| 100+ | 16.83 грн |
| 500+ | 11.95 грн |
| 1000+ | 10.71 грн |