SI1905BDH-T1-E3
Виробник:
на замовлення 33000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI1905BDH-T1-E3
Description: MOSFET 2P-CH 8V 0.63A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 357mW, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 630mA, Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V, Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6.
Інші пропозиції SI1905BDH-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SI1905BDH-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 8V 0.63A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SI1905BDH-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.63A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2P-CH 8V 0.63A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.