SI1905BDH-T1-E3
Виробник:
на замовлення 33000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI1905BDH-T1-E3
Description: MOSFET 2P-CH 8V 0.63A SC70-6, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V, Current - Continuous Drain (Id) @ 25°C: 630mA, Drain to Source Voltage (Vdss): 8V, Power - Max: 357mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції SI1905BDH-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI1905BDH-T1-E3 | Vishay Siliconix |
Description: MOSFET 2P-CH 8V 0.63A SC70-6 Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V Current - Continuous Drain (Id) @ 25°C: 630mA Drain to Source Voltage (Vdss): 8V Power - Max: 357mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SI1905BDH-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.63A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 357mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 8V 0.63A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 8V
Power - Max: 357mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.