SI1965DH-T1-BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.14A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 740mW (Ta), 1.25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Технічний опис SI1965DH-T1-BE3 Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.14A SC70-6, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V, Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc), Drain to Source Voltage (Vdss): 12V, Power - Max: 740mW (Ta), 1.25W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції SI1965DH-T1-BE3 за ціною від 9.64 грн до 57.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI1965DH-T1-BE3 | Vishay |
MOSFETs SOT363 2PCH 12V 1.14A |
на замовлення 135224 шт: термін постачання 21-30 дні (днів) |
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SI1965DH-T1-BE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.14A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta), 1.25W (Tc) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SI1965DH-T1-BE3 |
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Виробник: Vishay
MOSFETs SOT363 2PCH 12V 1.14A
MOSFETs SOT363 2PCH 12V 1.14A
на замовлення 135224 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 53.28 грн |
| 10+ | 32.68 грн |
| 100+ | 18.36 грн |
| 500+ | 13.97 грн |
| 1000+ | 12.64 грн |
| 3000+ | 9.64 грн |
| SI1965DH-T1-BE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.14A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Description: MOSFET 2P-CH 12V 1.14A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.35 грн |
| 10+ | 34.27 грн |
| 100+ | 22.10 грн |
| 500+ | 15.81 грн |
| 1000+ | 13.72 грн |