SI2122DS-T1-BE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 5+ | 68.39 грн |
| 10+ | 46.78 грн |
| 100+ | 25.73 грн |
| 500+ | 15.92 грн |
| 1000+ | 11.75 грн |
| 3000+ | 10.43 грн |
| 6000+ | 8.97 грн |
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Технічний опис SI2122DS-T1-BE3 Vishay Semiconductors
Description: N-CHANNEL 100-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta), 2.17A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 2.5A, 10V, Power Dissipation (Max): 960mW (Ta), 1.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V.
Інші пропозиції SI2122DS-T1-BE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SI2122DS-T1-BE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.65A (Ta), 2.17A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.5A, 10V Power Dissipation (Max): 960mW (Ta), 1.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V |
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