SI2307BDS-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Відгуки про товар
Написати відгук
Технічний опис SI2307BDS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції SI2307BDS-T1-GE3 за ціною від 13.34 грн до 65.20 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI2307BDS-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 3.2A 1.25W 78mohm @ 10V |
на замовлення 52775 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
SI2307BDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V |
на замовлення 4109 шт: термін постачання 21-31 дні (днів) |
|
| SI2307BDS-T1-GE3 |
![]() |
Виробник: Vishay Semiconductors
MOSFETs 30V 3.2A 1.25W 78mohm @ 10V
MOSFETs 30V 3.2A 1.25W 78mohm @ 10V
на замовлення 52775 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 54.17 грн |
| 10+ | 36.14 грн |
| 100+ | 21.58 грн |
| 500+ | 18.02 грн |
| 1000+ | 15.64 грн |
| 3000+ | 14.18 грн |
| 6000+ | 13.34 грн |
| SI2307BDS-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
на замовлення 4109 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.20 грн |
| 10+ | 39.34 грн |
| 100+ | 25.62 грн |
| 500+ | 18.49 грн |
| 1000+ | 16.70 грн |



