SI2316BDS-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 15.50 грн |
| 6000+ | 14.14 грн |
| 9000+ | 13.09 грн |
| 30000+ | 12.17 грн |
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Технічний опис SI2316BDS-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SI2316BDS-T1-GE3 за ціною від 12.92 грн до 60.12 грн
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SI2316BDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 61123 шт: термін постачання 21-31 дні (днів) |
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SI2316BDS-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 4.5A 1.66W 50mohm @ 10V |
на замовлення 17394 шт: термін постачання 21-30 дні (днів) |
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| SI2316BDS-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 61123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.85 грн |
| 10+ | 34.04 грн |
| 100+ | 23.57 грн |
| 500+ | 18.48 грн |
| 1000+ | 15.73 грн |
| SI2316BDS-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 30V 4.5A 1.66W 50mohm @ 10V
MOSFETs 30V 4.5A 1.66W 50mohm @ 10V
на замовлення 17394 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.12 грн |
| 10+ | 39.19 грн |
| 100+ | 22.76 грн |
| 500+ | 18.29 грн |
| 1000+ | 16.06 грн |
| 3000+ | 13.83 грн |
| 6000+ | 12.92 грн |