SI2319DS-T1-GE3 VISHAY

Description: MOSFET P-CH 40V 2.3A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).