SI2324DS-T1-BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.85 грн |
| 6000+ | 13.58 грн |
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Технічний опис SI2324DS-T1-BE3 Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT-23, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SI2324DS-T1-BE3 за ціною від 11.98 грн до 44.40 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI2324DS-T1-BE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 100V (D-S) |
на замовлення 7533 шт: термін постачання 21-30 дні (днів) |
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SI2324DS-T1-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 2.3A SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 8630 шт: термін постачання 21-31 дні (днів) |
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| SI2324DS-T1-BE3 |
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Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 100V (D-S)
MOSFETs N-CHANNEL 100V (D-S)
на замовлення 7533 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.50 грн |
| 11+ | 32.34 грн |
| 100+ | 21.99 грн |
| 500+ | 18.47 грн |
| 1000+ | 15.37 грн |
| 3000+ | 12.97 грн |
| 9000+ | 11.98 грн |
| SI2324DS-T1-BE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 8630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.40 грн |
| 10+ | 36.27 грн |
| 100+ | 25.21 грн |
| 500+ | 18.47 грн |
| 1000+ | 15.02 грн |