SI2324DS-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 13.23 грн |
| 6000+ | 12.21 грн |
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Технічний опис SI2324DS-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SI2324DS-T1-GE3 за ціною від 11.45 грн до 33.49 грн
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SI2324DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 2.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V |
на замовлення 39406 шт: термін постачання 21-31 дні (днів) |
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SI2324DS-T1-GE3 | Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs SOT-23 |
на замовлення 165384 шт: термін постачання 21-30 дні (днів) |
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SI2324DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 234mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.9nC |
на замовлення 1353 шт: термін постачання 14-30 дні (днів) |
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| SI2324DS-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Description: MOSFET N-CH 100V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
на замовлення 39406 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.28 грн |
| 14+ | 21.63 грн |
| 100+ | 18.15 грн |
| 500+ | 16.35 грн |
| 1000+ | 14.60 грн |
| SI2324DS-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 100V Vds 20V Vgs SOT-23
MOSFETs 100V Vds 20V Vgs SOT-23
на замовлення 165384 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.91 грн |
| 13+ | 24.89 грн |
| 100+ | 18.85 грн |
| 500+ | 16.97 грн |
| 1000+ | 15.29 грн |
| 3000+ | 11.80 грн |
| 6000+ | 11.45 грн |
| SI2324DS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 234mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 234mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.9nC
на замовлення 1353 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 33.49 грн |
| 16+ | 26.39 грн |
| 18+ | 24.38 грн |
| 50+ | 20.68 грн |
| 100+ | 19.42 грн |
| 500+ | 17.31 грн |