.jpg "SI2337DS-T1-BE3")
SI2337DS-T1-BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 28.73 грн |
| 6000+ | 26.35 грн |
Відгуки про товар
Написати відгук
Технічний опис SI2337DS-T1-BE3 Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 760mW (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SI2337DS-T1-BE3 за ціною від 25.63 грн до 127.90 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI2337DS-T1-BE3 | Vishay Siliconix |
Description: P-CHANNEL 80-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V |
на замовлення 6790 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SI2337DS-T1-BE3 | Vishay / Siliconix |
MOSFETs SOT233 P CHAN 80V |
на замовлення 45044 шт: термін постачання 21-30 дні (днів) |
|
| SI2337DS-T1-BE3 |
|
Виробник: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
Description: P-CHANNEL 80-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
на замовлення 6790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.91 грн |
| 10+ | 54.77 грн |
| 100+ | 42.57 грн |
| 500+ | 33.86 грн |
| 1000+ | 27.58 грн |
| SI2337DS-T1-BE3 |
|
Виробник: Vishay / Siliconix
MOSFETs SOT233 P CHAN 80V
MOSFETs SOT233 P CHAN 80V
на замовлення 45044 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 127.90 грн |
| 10+ | 78.70 грн |
| 100+ | 44.69 грн |
| 500+ | 34.36 грн |
| 1000+ | 31.07 грн |
| 3000+ | 26.39 грн |
| 9000+ | 25.63 грн |