на замовлення 128674 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.49 грн |
| 14+ | 22.34 грн |
| 100+ | 13.22 грн |
| 1000+ | 7.48 грн |
| 3000+ | 6.88 грн |
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Технічний опис SI2356DS-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc), Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V, Power Dissipation (Max): 960mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V.
Інші пропозиції SI2356DS-T1-BE3
| Фото | Назва | Виробник | Інформація |
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| SI2356DS-T1-BE3 | Виробник : Vishay |
 Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R |
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| SI2356DS-T1-BE3 | Виробник : Vishay |
N-Channel MOSFET |
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| SI2356DS-T1-BE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A Case: SOT23 Kind of package: reel; tape Technology: TrenchFET® Mounting: SMD Drain-source voltage: 40V Drain current: 4.3A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A кількість в упаковці: 1 шт |
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SI2356DS-T1-BE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V |
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SI2356DS-T1-BE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.3A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V |
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| SI2356DS-T1-BE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A Case: SOT23 Kind of package: reel; tape Technology: TrenchFET® Mounting: SMD Drain-source voltage: 40V Drain current: 4.3A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A |
товар відсутній |