SI2367DS-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 3000+ | 10.98 грн |
| 6000+ | 9.66 грн |
| 9000+ | 9.20 грн |
| 15000+ | 8.14 грн |
| 21000+ | 7.85 грн |
| 30000+ | 7.57 грн |
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Технічний опис SI2367DS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 960mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V.
Інші пропозиції SI2367DS-T1-GE3 за ціною від 7.82 грн до 47.58 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI2367DS-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 8V Vgs SOT-23 |
на замовлення 17716 шт: термін постачання 21-30 дні (днів) |
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SI2367DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V |
на замовлення 56721 шт: термін постачання 21-31 дні (днів) |
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| SI2367DS-T1-GE3 |
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Виробник: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs SOT-23
MOSFETs -20V Vds 8V Vgs SOT-23
на замовлення 17716 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 25.24 грн |
| 16+ | 21.48 грн |
| 100+ | 14.73 грн |
| 500+ | 12.12 грн |
| 1000+ | 9.66 грн |
| 3000+ | 8.25 грн |
| 9000+ | 7.82 грн |
| SI2367DS-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
на замовлення 56721 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.58 грн |
| 11+ | 28.40 грн |
| 100+ | 18.20 грн |
| 500+ | 12.95 грн |
| 1000+ | 11.62 грн |