SI2369BDS-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
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Технічний опис SI2369BDS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +16V, -20V.
Інші пропозиції SI2369BDS-T1-GE3 за ціною від 9.44 грн до 52.30 грн
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SI2369BDS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 17262 шт: термін постачання 21-31 дні (днів) |
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SI2369BDS-T1-GE3 | Vishay Semiconductors |
MOSFETs 30-V (D-S) MOSFET P-CHANNEL |
на замовлення 324995 шт: термін постачання 21-30 дні (днів) |
|
| SI2369BDS-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 17262 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.16 грн |
| 11+ | 29.02 грн |
| 100+ | 18.59 грн |
| 500+ | 13.21 грн |
| 1000+ | 11.84 грн |
| SI2369BDS-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 30-V (D-S) MOSFET P-CHANNEL
MOSFETs 30-V (D-S) MOSFET P-CHANNEL
на замовлення 324995 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 52.30 грн |
| 11+ | 31.94 грн |
| 100+ | 17.83 грн |
| 500+ | 13.60 грн |
| 1000+ | 12.19 грн |
| 3000+ | 10.36 грн |
| 6000+ | 9.44 грн |