SI2387DS-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 3000+ | 9.37 грн |
| 6000+ | 8.23 грн |
| 9000+ | 7.83 грн |
| 15000+ | 6.93 грн |
| 21000+ | 6.67 грн |
| 30000+ | 6.43 грн |
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Технічний опис SI2387DS-T1-GE3 Vishay Siliconix
Description: P-CHANNEL -80V SOT-23, 164 M @ 1, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc), Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V, Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V.
Інші пропозиції SI2387DS-T1-GE3 за ціною від 8.04 грн до 40.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI2387DS-T1-GE3 | Vishay / Siliconix |
MOSFET SOT-23 |
на замовлення 89168 шт: термін постачання 245-254 дні (днів) |
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SI2387DS-T1-GE3 | Vishay Siliconix |
Description: P-CHANNEL -80V SOT-23, 164 M @ 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V |
на замовлення 30369 шт: термін постачання 21-31 дні (днів) |
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| SI2387DS-T1-GE3 |
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Виробник: Vishay / Siliconix
MOSFET SOT-23
MOSFET SOT-23
на замовлення 89168 шт:
термін постачання 245-254 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.50 грн |
| 12+ | 29.02 грн |
| 100+ | 16.14 грн |
| 1000+ | 9.44 грн |
| 3000+ | 8.39 грн |
| 9000+ | 8.04 грн |
| SI2387DS-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
Description: P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
на замовлення 30369 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.44 грн |
| 13+ | 24.51 грн |
| 100+ | 15.64 грн |
| 500+ | 11.09 грн |
| 1000+ | 9.94 грн |