SI3127DV-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 3000+ | 11.53 грн |
| 6000+ | 10.17 грн |
| 9000+ | 9.69 грн |
| 15000+ | 8.59 грн |
| 21000+ | 8.29 грн |
| 30000+ | 8.01 грн |
| 75000+ | 7.77 грн |
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Технічний опис SI3127DV-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc), Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V.
Інші пропозиції SI3127DV-T1-GE3 за ціною від 9.02 грн до 49.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI3127DV-T1-GE3 | Vishay / Siliconix |
MOSFETs -60V Vds 20V Vgs TSOP-6 |
на замовлення 361461 шт: термін постачання 21-30 дні (днів) |
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SI3127DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V |
на замовлення 86480 шт: термін постачання 21-31 дні (днів) |
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| SI3127DV-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs -60V Vds 20V Vgs TSOP-6
MOSFETs -60V Vds 20V Vgs TSOP-6
на замовлення 361461 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 41.03 грн |
| 13+ | 25.05 грн |
| 100+ | 17.76 грн |
| 500+ | 13.53 грн |
| 1000+ | 12.19 грн |
| 3000+ | 9.44 грн |
| 6000+ | 9.02 грн |
| SI3127DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
на замовлення 86480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.16 грн |
| 11+ | 29.40 грн |
| 100+ | 18.94 грн |
| 500+ | 13.53 грн |
| 1000+ | 12.16 грн |