Si3430DV-T1-GE3 Vishay / Siliconix

Description: MOSFET N-CH 100V 1.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V.