SI3437DV-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 3000+ | 24.58 грн |
| 6000+ | 21.94 грн |
| 9000+ | 21.05 грн |
| 15000+ | 18.83 грн |
| 21000+ | 18.27 грн |
| 30000+ | 18.03 грн |
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Технічний опис SI3437DV-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V, Power Dissipation (Max): 2W (Ta), 3.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V.
Інші пропозиції SI3437DV-T1-E3 за ціною від 19.95 грн до 95.94 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI3437DV-T1-E3 | Vishay Semiconductors |
MOSFETs -150V Vds 20V Vgs TSOP-6 |
на замовлення 65581 шт: термін постачання 21-30 дні (днів) |
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SI3437DV-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 1.4A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V |
на замовлення 33224 шт: термін постачання 21-31 дні (днів) |
|
| SI3437DV-T1-E3 |
|
Виробник: Vishay Semiconductors
MOSFETs -150V Vds 20V Vgs TSOP-6
MOSFETs -150V Vds 20V Vgs TSOP-6
на замовлення 65581 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.88 грн |
| 10+ | 39.80 грн |
| 100+ | 27.07 грн |
| 500+ | 24.46 грн |
| 1000+ | 22.84 грн |
| 3000+ | 19.95 грн |
| SI3437DV-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V
Description: MOSFET P-CH 150V 1.4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 50 V
на замовлення 33224 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 95.94 грн |
| 10+ | 57.88 грн |
| 100+ | 38.27 грн |
| 500+ | 28.00 грн |
| 1000+ | 25.45 грн |