| Кількість | Ціна |
|---|---|
| 8+ | 43.18 грн |
| 10+ | 37.34 грн |
| 100+ | 22.14 грн |
| 500+ | 18.50 грн |
| 1000+ | 16.27 грн |
| 3000+ | 13.69 грн |
Відгуки про товар
Написати відгук
Технічний опис SI3442BDV-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 2.5-V (G-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції SI3442BDV-T1-BE3 за ціною від 17.89 грн до 46.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI3442BDV-T1-BE3 | Vishay Siliconix |
 Description: N-CHANNEL 2.5-V (G-S) MOSFETInput Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 1617 шт: термін постачання 21-31 дні (днів) |
|
| SI3442BDV-T1-BE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 2.5-V (G-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: N-CHANNEL 2.5-V (G-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 1617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 10+ | 39.34 грн |
| 100+ | 30.15 грн |
| 500+ | 22.36 грн |
| 1000+ | 17.89 грн |