SI3442BDV-T1-BE3 Vishay Siliconix

Description: N-CHANNEL 2.5-V (G-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).