| Кількість | Ціна |
|---|---|
| 9+ | 38.89 грн |
| 14+ | 23.67 грн |
| 100+ | 13.11 грн |
| 500+ | 9.87 грн |
| 1000+ | 8.81 грн |
| 3000+ | 7.40 грн |
| 6000+ | 6.70 грн |
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Технічний опис SI3453DV-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції SI3453DV-T1-GE3 за ціною від 8.89 грн до 30.92 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI3453DV-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CHANNEL 30V 3.4A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 1935 шт: термін постачання 21-31 дні (днів) |
|
| SI3453DV-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 1935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 14+ | 23.14 грн |
| 100+ | 12.08 грн |
| 500+ | 10.35 грн |
| 1000+ | 8.89 грн |