SI3467DV-T1-E3 Vishay BC Components
Виробник: Vishay BC Components
P-канальный ПТ, Ptot, Вт = 1.14, Id = 5 A, Vdss В = 20, Rds = 54 мОм, Qg,нКл = 13, Tэксп, °C = -55...+150, Vgs(th) = 10 В, Тип монт. = smd,... Транзистори Корпус: 6-TSOP Од. вим: шт
кількість в упаковці: 3000 шт
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Технічний опис SI3467DV-T1-E3 Vishay BC Components
Description: MOSFET P-CH 20V 3.8A 6TSOP, Power Dissipation (Max): 1.14W (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA.
Інші пропозиції SI3467DV-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI3467DV-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A 6TSOP Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. |
| SI3467DV-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 6TSOP
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET P-CH 20V 3.8A 6TSOP
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.