SI3467DV-T1-GE3
Виробник:
на замовлення 33000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI3467DV-T1-GE3
Description: MOSFET P-CH 20V 3.8A 6TSOP, Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.14W (Ta).
Інші пропозиції SI3467DV-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI3467DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A 6TSOP Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.14W (Ta) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SI3467DV-T1-GE3 | Vishay / Siliconix |
 MOSFET 20V 5.0A 2.0W 54mohm @ 10V |
товару немає в наявності |
В кошику од. на суму грн. |
| SI3467DV-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 6TSOP
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Description: MOSFET P-CH 20V 3.8A 6TSOP
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
товару немає в наявності
В кошику
од. на суму грн.
| SI3467DV-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFET 20V 5.0A 2.0W 54mohm @ 10V
MOSFET 20V 5.0A 2.0W 54mohm @ 10V
товару немає в наявності
В кошику
од. на суму грн.