SI3473CDV-T1-BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
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Технічний опис SI3473CDV-T1-BE3 Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V.
Інші пропозиції SI3473CDV-T1-BE3 за ціною від 21.17 грн до 81.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SI3473CDV-T1-BE3 | Vishay Siliconix |
Description: P-CHANNEL 12-V (D-S) MOSFET Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V |
на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
|
| SI3473CDV-T1-BE3 |
|
Виробник: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Description: P-CHANNEL 12-V (D-S) MOSFET
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 81.70 грн |
| 10+ | 49.17 грн |
| 100+ | 32.21 грн |
| 500+ | 23.38 грн |
| 1000+ | 21.17 грн |