на замовлення 101553 шт:
термін постачання 798-807 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.22 грн |
| 12+ | 28.02 грн |
| 100+ | 18.24 грн |
| 500+ | 14.27 грн |
| 1000+ | 11.11 грн |
| 3000+ | 10.03 грн |
Відгуки про товар
Написати відгук
Технічний опис SI3474DV-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc), Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V, Power Dissipation (Max): 2W (Ta), 3.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V.
Інші пропозиції SI3474DV-T1-BE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI3474DV-T1-BE3 | Виробник : Vishay |
 Trans MOSFET |
товар відсутній |
||
 |
SI3474DV-T1-BE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
товар відсутній |
|
|
|
SI3474DV-T1-BE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
товар відсутній |