SI3476DV-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 80V 4.6A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 3.6W (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).