на замовлення 11466 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.84 грн |
| 10+ | 56.98 грн |
| 100+ | 38.57 грн |
| 500+ | 35.61 грн |
| 3000+ | 30.23 грн |
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Технічний опис SI3499DV-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 1.5-V (G-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 750mV @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V.
Інші пропозиції SI3499DV-T1-BE3 за ціною від 30.06 грн до 72.82 грн
| Фото | Назва | Виробник | Інформація |
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SI3499DV-T1-BE3 | Виробник : Vishay Siliconix |
 Description: P-CHANNEL 1.5-V (G-S) MOSFETPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
на замовлення 2911 шт: термін постачання 21-31 дні (днів) |
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| SI3499DV-T1-BE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W Mounting: SMD Case: TSOP6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -20A Power dissipation: 2W Drain-source voltage: -8V Drain current: -7A On-state resistance: 48mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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SI3499DV-T1-BE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 1.5-V (G-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
товар відсутній |
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| SI3499DV-T1-BE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W Mounting: SMD Case: TSOP6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -20A Power dissipation: 2W Drain-source voltage: -8V Drain current: -7A On-state resistance: 48mΩ Type of transistor: P-MOSFET |
товар відсутній |