SI3552DV-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Кількість | Ціна |
|---|---|
| 3000+ | 20.91 грн |
| 6000+ | 19.57 грн |
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Технічний опис SI3552DV-T1-E3 Vishay Siliconix
Description: VISHAY - SI3552DV-T1-E3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 2.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 2.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm, Verlustleistung, p-Kanal: 1.15W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.15W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (04-Feb-2026).
Інші пропозиції SI3552DV-T1-E3 за ціною від 16.39 грн до 88.61 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI3552DV-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.5/-1.8A Pulsed drain current: -7...8A Power dissipation: 1.15W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 360/175mΩ Mounting: SMD Gate charge: 3.6/3.2nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
на замовлення 62 шт: термін постачання 14-30 дні (днів) |
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SI3552DV-T1-E3 | Vishay Semiconductors |
MOSFETs RECOMMENDED ALT SI35 |
на замовлення 173834 шт: термін постачання 21-30 дні (днів) |
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SI3552DV-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) |
на замовлення 6588 шт: термін постачання 21-31 дні (днів) |
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SI3552DV-T1-E3 | VISHAY |
Description: VISHAY - SI3552DV-T1-E3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 2.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm Verlustleistung, p-Kanal: 1.15W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.15W Betriebstemperatur, max.: 150°C SVHC: No SVHC (04-Feb-2026) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SI3552DV-T1-E3 | VISHAY |
Description: VISHAY - SI3552DV-T1-E3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 2.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm Verlustleistung, p-Kanal: 1.15W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.15W Betriebstemperatur, max.: 150°C SVHC: No SVHC (04-Feb-2026) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. |
| SI3552DV-T1-E3 |
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Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
Pulsed drain current: -7...8A
Power dissipation: 1.15W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 360/175mΩ
Mounting: SMD
Gate charge: 3.6/3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-1.8A
Pulsed drain current: -7...8A
Power dissipation: 1.15W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 360/175mΩ
Mounting: SMD
Gate charge: 3.6/3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
на замовлення 62 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 81.13 грн |
| 7+ | 62.30 грн |
| 25+ | 44.53 грн |
| 50+ | 37.92 грн |
| SI3552DV-T1-E3 |
|
Виробник: Vishay Semiconductors
MOSFETs RECOMMENDED ALT SI35
MOSFETs RECOMMENDED ALT SI35
на замовлення 173834 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 85.33 грн |
| 10+ | 52.57 грн |
| 100+ | 30.10 грн |
| 500+ | 23.56 грн |
| 1000+ | 21.24 грн |
| 3000+ | 16.39 грн |
| SI3552DV-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
на замовлення 6588 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.61 грн |
| 10+ | 53.48 грн |
| 100+ | 35.21 грн |
| 500+ | 25.67 грн |
| 1000+ | 23.30 грн |
| SI3552DV-T1-E3 |
|
Виробник: VISHAY
Description: VISHAY - SI3552DV-T1-E3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 2.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 1.15W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.15W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SI3552DV-T1-E3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 2.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 1.15W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.15W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| SI3552DV-T1-E3 |
|
Виробник: VISHAY
Description: VISHAY - SI3552DV-T1-E3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 2.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 1.15W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.15W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SI3552DV-T1-E3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 2.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 2.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm
Verlustleistung, p-Kanal: 1.15W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.15W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (04-Feb-2026)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)