SI3585DV-T1-E3 VISHAY

Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP, Power - Max: 830mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A, Drain to Source Voltage (Vdss): 20V.