SI3588DV-T1-E3
Виробник:
на замовлення 410 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI3588DV-T1-E3
Description: MOSFET N/P-CH 20V 6TSOP, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 830mW, 83mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції SI3588DV-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI3588DV-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6TSOP Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA Drain to Source Voltage (Vdss): 20V Power - Max: 830mW, 83mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SI3588DV-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6TSOP Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA Drain to Source Voltage (Vdss): 20V Power - Max: 830mW, 83mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SI3588DV-T1-E3 | Vishay / Siliconix |
 MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3 |
товару немає в наявності |
В кошику од. на суму грн. |
| SI3588DV-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW, 83mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW, 83mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SI3588DV-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW, 83mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW, 83mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SI3588DV-T1-E3 |
|
Виробник: Vishay / Siliconix
MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
товару немає в наявності
В кошику
од. на суму грн.