Технічний опис SI3911DV-T1-E3 VISHAY
Description: MOSFET 2P-CH 20V 1.8A 6TSOP, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Drain to Source Voltage (Vdss): 20V, Power - Max: 830mW, Technology: MOSFET (Metal Oxide), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Cut Tape (CT).
Інші пропозиції SI3911DV-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI3911DV-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 20V 1.8A 6TSOPSupplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 20V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SI3911DV-T1-E3 | Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SI3993CDV-T1-GE3 |
товару немає в наявності |
В кошику од. на суму грн. |
| SI3911DV-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SI3911DV-T1-E3 |
|
Виробник: Vishay / Siliconix
MOSFET RECOMMENDED ALT 78-SI3993CDV-T1-GE3
MOSFET RECOMMENDED ALT 78-SI3993CDV-T1-GE3
товару немає в наявності
В кошику
од. на суму грн.