SI4038DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 42.5A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
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Технічний опис SI4038DY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 42.5A 8SO, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V.
Інші пропозиції SI4038DY-T1-GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
SI4038DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 42.5A 8SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SI4038DY-T1-GE3 | Vishay / Siliconix |
MOSFETs RECOMMENDED ALT SI4154DY-GE3 |
товару немає в наявності |
В кошику од. на суму грн. |
| SI4038DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 42.5A; Idm: 150A Mounting: SMD Polarisation: unipolar Technology: TrenchFET® Case: SO8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Gate charge: 87nC On-state resistance: 3.2mΩ Power dissipation: 7.8W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 42.5A Pulsed drain current: 150A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| SI4038DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 42.5A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Description: MOSFET N-CH 40V 42.5A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
товару немає в наявності
В кошику
од. на суму грн.
| SI4038DY-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SI4154DY-GE3
MOSFETs RECOMMENDED ALT SI4154DY-GE3
товару немає в наявності
В кошику
од. на суму грн.
| SI4038DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 42.5A; Idm: 150A
Mounting: SMD
Polarisation: unipolar
Technology: TrenchFET®
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 87nC
On-state resistance: 3.2mΩ
Power dissipation: 7.8W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 42.5A
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 42.5A; Idm: 150A
Mounting: SMD
Polarisation: unipolar
Technology: TrenchFET®
Case: SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 87nC
On-state resistance: 3.2mΩ
Power dissipation: 7.8W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 42.5A
Pulsed drain current: 150A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.