SI4090BDY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET SO-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 2500+ | 40.64 грн |
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Технічний опис SI4090BDY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4090BDY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 18.7 A, 8400 µohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 18.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, usEccn: EAR99, Verlustleistung Pd: 7.4W, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 7.4W, Bauform - Transistor: SOIC, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0084ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 8400µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції SI4090BDY-T1-GE3 за ціною від 40.30 грн до 101.97 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||||||||
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SI4090BDY-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SI4090BDY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 18.7 A, 8400 µohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 18.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Verlustleistung Pd: 7.4W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 7.4W Bauform - Transistor: SOIC Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0084ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 8400µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 12840 шт: термін постачання 21-31 дні (днів) |
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SI4090BDY-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SI4090BDY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 18.7 A, 8400 µohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 18.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 7.4W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 8400µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 12840 шт: термін постачання 21-31 дні (днів) |
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SI4090BDY-T1-GE3 | Виробник : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET SO- Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), 18.7A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 12.2A, 10V Power Dissipation (Max): 3.1W (Ta), 7.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3570 pF @ 50 V |
на замовлення 2611 шт: термін постачання 21-31 дні (днів) |
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| SI4090BDY-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.7A; Idm: 80A Type of transistor: N-MOSFET Technology: TrenchFET® Drain-source voltage: 100V Drain current: 18.7A Power dissipation: 7.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 70nC Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: 80A |
товару немає в наявності |